Ferroelectric Random Access Memory (FRAM) is a type of non-volatile memory that combines the speed and durability of SRAM with the data retention capabilities of EEPROM. FRAM uses ferroelectric material to store data, providing fast write and read speeds, high endurance, and low power consumption. It is used in applications requiring frequent and reliable data writing, such as smart cards, RFID systems, and industrial automation. FRAM's unique properties make it an ideal choice for demanding memory applications.
- FUJITSU MB85RS128TPNF-G-JNERE1
- FUJITSU MB85RS2MTAPNF-G-BDE1
- FUJITSU MB85R4M2TFN-G-ASE1
- FUJITSU MB85RC1MTPNF-G-JNE1
- Cypress Semicon FM24CL04B-GTR
- Cypress Semicon FM24CL16B-GTR (SMT)
- Cypress Semicon FM25V20A-DG
- FUJITSU MB85RC04PNF-G-JNERE1
- Cypress Semicon FM25640B-GATR
- Cypress Semicon FM22LD16-55-BG
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- Cypress Semicon FM25CL64B-G
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- Cypress Semicon FM24W256-G
- Cypress Semicon FM24V01A-G