Compare FUXINSEMI – BC857BDW vs FUXINSEMI – B772-Y Specifications

BC857BDW B772-Y
Model Number
BC857BDW B772-Y
Model Name
FUXINSEMI BC857BDW FUXINSEMI B772-Y
Category
Bipolar Transistors - BJT Bipolar Transistors - BJT
Brand
FUXINSEMI FUXINSEMI
Description
45V 300mW 400@2mA,5V 200mA PNP SOT-363 Bipolar Transistors - BJT ROHS 30V 500mW 400@1A,2V 3A PNP SOT-89-3 Bipolar Transistors - BJT ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.032 grams / 0.001129 oz 0.120 grams / 0.004233 oz
Package / Case
SOT-363 SOT-89-3
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
- -
Collector Cut-Off Current (Icbo)
15nA 1uA
Collector-Emitter Breakdown Voltage (Vceo)
45V 30V
Power Dissipation (Pd)
300mW 500mW
DC Current Gain (hFE@Ic,Vce)
400@2mA,5V 400@1A,2V
Collector Current (Ic)
200mA 3A
Transition Frequency (fT)
200MHz 50MHz
Transistor Type
PNP PNP
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)
650mV@100mA,5mA 500mV@2A,0.2A
Operating Temperature
-55℃~+150℃ -55℃~+150℃

Compare FUXINSEMI - BC857BDW With Other 8 Models

Scroll to Top