| Model Number |
| FD965S |
2N5551 |
| Model Name |
| FUXINSEMI FD965S |
FUXINSEMI 2N5551 |
| Category |
| Bipolar Transistors - BJT |
Bipolar Transistors - BJT |
| Brand |
| FUXINSEMI |
FUXINSEMI |
| Description |
| 20V 750mW 1000@500mA,2V 5A NPN SOT-23 Bipolar Transistors - BJT ROHS |
160V 625mW 600mA NPN TO-92-3 Bipolar Transistors - BJT ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.030 grams / 0.001058 oz |
0.278 grams / 0.009806 oz |
| Package / Case |
| SOT-23 |
TO-92-3 |
| Package / Arrange |
| Tape & Reel (TR) |
Box-packed |
| Battery |
| No |
No |
| ECCN |
| - |
- |
| Collector Cut-Off Current (Icbo) |
| 100nA |
50nA |
| Collector-Emitter Breakdown Voltage (Vceo) |
| 20V |
160V |
| Power Dissipation (Pd) |
| 750mW |
625mW |
| DC Current Gain (hFE@Ic,Vce) |
| 1000@500mA,2V |
N/A |
| Collector Current (Ic) |
| 5A |
600mA |
| Transition Frequency (fT) |
| 150MHz |
100MHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) |
| [email protected],3A |
200mV@50mA,5mA |
| Transistor Type |
| NPN |
NPN |
| Operating Temperature |
| -55℃~+150℃ |
- |
