Model Number |
GC11N65F |
G2K3N10G |
Model Name |
GOFORD GC11N65F |
GOFORD G2K3N10G |
Category |
MOSFETs |
MOSFETs |
Brand |
GOFORD |
GOFORD |
Description |
650V 11A 31.3W 360mΩ@10V,5.5A 4V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS |
100V 2.5A 1.5W 180mΩ@10V 2V@250uA 1PCSNChannel SOT-89 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
2.920 grams / 0.103 oz |
0.113 grams / 0.003986 oz |
Package / Case |
TO-220F-3 |
SOT-89 |
Package / Arrange |
Tube-packed |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
650V |
100V |
Continuous Drain Current (Id) |
11A |
2.5A |
Power Dissipation (Pd) |
31.3W |
1.5W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
360mΩ@10V,5.5A |
180mΩ@10V |
Gate Threshold Voltage (Vgs(th)@Id) |
4V@250uA |
2V@250uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
901pF@50V |
436nF@50V |
Total Gate Charge (Qg@Vgs) |
21nC@10V |
13nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+150℃ |