| Model Number |
| GC11N65F |
GT023N10M |
| Model Name |
| GOFORD GC11N65F |
GOFORD GT023N10M |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| GOFORD |
GOFORD |
| Description |
| 650V 11A 31.3W 360mΩ@10V,5.5A 4V@250uA 1PCSNChannel TO-220F-3 MOSFETs ROHS |
100V 226A 2.2mΩ@10V 4.3V 1PCSNChannel TO-263 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 2.920 grams / 0.103 oz |
1.692 grams / 0.059684 oz |
| Package / Case |
| TO-220F-3 |
TO-263 |
| Package / Arrange |
| Tube-packed |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 650V |
100V |
| Continuous Drain Current (Id) |
| 11A |
226A |
| Power Dissipation (Pd) |
| 31.3W |
N/A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 360mΩ@10V,5.5A |
2.2mΩ@10V |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 4V@250uA |
4.3V |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 901pF@50V |
N/A |
| Total Gate Charge (Qg@Vgs) |
| 21nC@10V |
N/A |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
N/A |
