Compare GOFORD – GT125N10M vs GOFORD – G1006R Specifications

GT125N10M G1006R
Model Number
GT125N10M G1006R
Model Name
GOFORD GT125N10M GOFORD G1006R
Category
MOSFETs MOSFETs
Brand
GOFORD GOFORD
Description
100V 130A 4.1mΩ@10V,60A 192W 4V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS 114mΩ TO-92 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.680 grams / 0.05926 oz 0.262 grams / 0.009242 oz
Package / Case
TO-263-2 TO-92
Package / Arrange
Tape & Reel (TR) Bag-packed
Battery
No No
ECCN
- -
Drain Source Voltage (Vdss)
100V N/A
Continuous Drain Current (Id)
130A N/A
Drain Source On Resistance (RDS(on)@Vgs,Id)
4.1mΩ@10V,60A 114mΩ
Power Dissipation (Pd)
192W N/A
Gate Threshold Voltage (Vgs(th)@Id)
4V@250uA N/A
Reverse Transfer Capacitance (Crss@Vds)
15.1pF@50V N/A
Type
1PCSNChannel N/A
Input Capacitance (Ciss@Vds)
6.1246nF@50V N/A
Total Gate Charge (Qg@Vgs)
101.6nC@10V N/A
Operating Temperature
-55℃~+150℃@(Tj) N/A

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