Model Number |
GT125N10M |
G35P04D5 |
Model Name |
GOFORD GT125N10M |
GOFORD G35P04D5 |
Category |
MOSFETs |
MOSFETs |
Brand |
GOFORD |
GOFORD |
Description |
100V 130A 4.1mΩ@10V,60A 192W 4V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS |
40V 35A 11mΩ@10V 1.5V 1PCSPChannel DFN-8L(5x6) MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.680 grams / 0.05926 oz |
0.160 grams / 0.005644 oz |
Package / Case |
TO-263-2 |
DFN-8L(5x6) |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
- |
EAR99 |
Drain Source Voltage (Vdss) |
100V |
40V |
Continuous Drain Current (Id) |
130A |
35A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
4.1mΩ@10V,60A |
11mΩ@10V |
Power Dissipation (Pd) |
192W |
N/A |
Gate Threshold Voltage (Vgs(th)@Id) |
4V@250uA |
1.5V |
Reverse Transfer Capacitance (Crss@Vds) |
15.1pF@50V |
N/A |
Type |
1PCSNChannel |
1PCSPChannel |
Input Capacitance (Ciss@Vds) |
6.1246nF@50V |
N/A |
Total Gate Charge (Qg@Vgs) |
101.6nC@10V |
N/A |
Operating Temperature |
-55℃~+150℃@(Tj) |
N/A |