Compare GOFORD – GT125N10M vs GOFORD – G4N60K Specifications

GT125N10M G4N60K
Model Number
GT125N10M G4N60K
Model Name
GOFORD GT125N10M GOFORD G4N60K
Category
MOSFETs MOSFETs
Brand
GOFORD GOFORD
Description
100V 130A 4.1mΩ@10V,60A 192W 4V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS 600V 4A 2.3Ω@10V,2A 44.6W 4V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.680 grams / 0.05926 oz 2.400 grams / 0.084658 oz
Package / Case
TO-263-2 TO-252-2
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
- -
Drain Source Voltage (Vdss)
100V 600V
Continuous Drain Current (Id)
130A 4A
Drain Source On Resistance (RDS(on)@Vgs,Id)
4.1mΩ@10V,60A 2.3Ω@10V,2A
Power Dissipation (Pd)
192W 44.6W
Gate Threshold Voltage (Vgs(th)@Id)
4V@250uA 4V@250uA
Reverse Transfer Capacitance (Crss@Vds)
15.1pF@50V N/A
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
6.1246nF@50V N/A
Total Gate Charge (Qg@Vgs)
101.6nC@10V N/A
Operating Temperature
-55℃~+150℃@(Tj) N/A

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