Model Number |
GT125N10M |
G4N60K |
Model Name |
GOFORD GT125N10M |
GOFORD G4N60K |
Category |
MOSFETs |
MOSFETs |
Brand |
GOFORD |
GOFORD |
Description |
100V 130A 4.1mΩ@10V,60A 192W 4V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS |
600V 4A 2.3Ω@10V,2A 44.6W 4V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.680 grams / 0.05926 oz |
2.400 grams / 0.084658 oz |
Package / Case |
TO-263-2 |
TO-252-2 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
- |
- |
Drain Source Voltage (Vdss) |
100V |
600V |
Continuous Drain Current (Id) |
130A |
4A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
4.1mΩ@10V,60A |
2.3Ω@10V,2A |
Power Dissipation (Pd) |
192W |
44.6W |
Gate Threshold Voltage (Vgs(th)@Id) |
4V@250uA |
4V@250uA |
Reverse Transfer Capacitance (Crss@Vds) |
15.1pF@50V |
N/A |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
6.1246nF@50V |
N/A |
Total Gate Charge (Qg@Vgs) |
101.6nC@10V |
N/A |
Operating Temperature |
-55℃~+150℃@(Tj) |
N/A |