| Model Number |
| GT125N10M |
G86N03 |
| Model Name |
| GOFORD GT125N10M |
GOFORD G86N03 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| GOFORD |
GOFORD |
| Description |
| 100V 130A 4.1mΩ@10V,60A 192W 4V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS |
30V 86A 4.5mΩ@10V 83W 1.6V 1PCSNChannel TO-252 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.680 grams / 0.05926 oz |
0.370 grams / 0.013051 oz |
| Package / Case |
| TO-263-2 |
TO-252 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| - |
- |
| Drain Source Voltage (Vdss) |
| 100V |
30V |
| Continuous Drain Current (Id) |
| 130A |
86A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 4.1mΩ@10V,60A |
4.5mΩ@10V |
| Power Dissipation (Pd) |
| 192W |
83W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 4V@250uA |
1.6V |
| Reverse Transfer Capacitance (Crss@Vds) |
| 15.1pF@50V |
- |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 6.1246nF@50V |
- |
| Total Gate Charge (Qg@Vgs) |
| 101.6nC@10V |
- |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
N/A |
