Compare GOFORD – GT125N10M vs GOFORD – GT100N12T Specifications

GT125N10M GT100N12T
Model Number
GT125N10M GT100N12T
Model Name
GOFORD GT125N10M GOFORD GT100N12T
Category
MOSFETs MOSFETs
Brand
GOFORD GOFORD
Description
100V 130A 4.1mΩ@10V,60A 192W 4V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS 120V 70A 120W 8mΩ@10V,35A 3.5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.680 grams / 0.05926 oz 2.700 grams / 0.09524 oz
Package / Case
TO-263-2 TO-220
Package / Arrange
Tape & Reel (TR) Tube-packed
Battery
No No
ECCN
- EAR99
Drain Source Voltage (Vdss)
100V 120V
Continuous Drain Current (Id)
130A 70A
Drain Source On Resistance (RDS(on)@Vgs,Id)
4.1mΩ@10V,60A 8mΩ@10V,35A
Power Dissipation (Pd)
192W 120W
Gate Threshold Voltage (Vgs(th)@Id)
4V@250uA 3.5V@250uA
Reverse Transfer Capacitance (Crss@Vds)
15.1pF@50V 22pF@50V
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
6.1246nF@50V 3.05nF@60V
Total Gate Charge (Qg@Vgs)
101.6nC@10V 50nC@10V
Operating Temperature
-55℃~+150℃@(Tj) -55℃~+150℃@(Tj)

Compare GOFORD - GT125N10M With Other 200 Models

Scroll to Top