| Model Number |
| 2EDN8524RXTMA1 |
6ED2231S12TXUMA1 |
| Model Name |
| Infineon Technologies 2EDN8524RXTMA1 |
Infineon Technologies 6ED2231S12TXUMA1 |
| Category |
| Gate Drive ICs |
Gate Drive ICs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| Low Side 2 MOSFET 5A 5.3ns 4.5ns 4.5V~20V 5A TSSOP-8 Gate Drive ICs ROHS |
Half Bridge 6 350mA 35ns 20ns 13V~20V 650mA SOIC-24-300mil Gate Drive ICs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.050 grams / 0.001764 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TSSOP-8 |
SOIC-24-300mil |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Driven Configuration |
| Low Side |
Half Bridge |
| Operating Temperature |
| -40℃~+150℃@(Tj) |
-40℃~+125℃@(Ta) |
| Number of Drivers |
| 2 |
6 |
| Load Type |
| MOSFET |
IGBT;MOSFET |
| Peak Output Current(source) |
| 5A |
350mA |
| Rise Time |
| 5.3ns |
35ns |
| Fall Time |
| 4.5ns |
20ns |
| Supply Voltage |
| 4.5V~20V |
13V~20V |
| Peak Output Current(sink) |
| 5A |
650mA |
