| Model Number |
| BAS125-04WE6327 |
IDH20G65C6 |
| Model Name |
| Infineon Technologies BAS125-04WE6327 |
Infineon Technologies IDH20G65C6 |
| Category |
| Schottky Barrier Diodes (SBD) |
Schottky Barrier Diodes (SBD) |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 25V Dual 950mV@35mA 100mA SOT-323-3 Schottky Barrier Diodes (SBD) ROHS |
650V Single 1.25V@20A 41A TO-220-2 Schottky Barrier Diodes (SBD) ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| SOT-323-3 |
TO-220-2 |
| Package / Arrange |
| Tape & Reel (TR) |
Tube-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
- |
| Reverse Leakage Current (Ir) |
| 150nA@25V |
2uA@420V |
| Reverse Voltage (Vr) |
| 25V |
650V |
| Diode Configuration |
| Dual |
Single |
| Forward Voltage (Vf@If) |
| 950mV@35mA |
1.25V@20A |
| Average Rectified Current (Io) |
| 100mA |
41A |
