| Model Number |
| BSC046N02KSGAUMA1 |
BSD223P H6327 |
| Model Name |
| Infineon Technologies BSC046N02KSGAUMA1 |
Infineon Technologies BSD223P H6327 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 20V 4.6mΩ@50A,4.5V 1.2V@110uA 1PCSNChannel TDSON-8 MOSFETs ROHS |
SOT-363-6 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
0.240 grams / 0.008466 oz |
| Package / Case |
| TDSON-8 |
SOT-363-6 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 20V |
- |
| Continuous Drain Current (Id) |
| 19A;80A |
- |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 4.6mΩ@50A,4.5V |
- |
| Power Dissipation (Pd) |
| 2.8W;48W |
- |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 1.2V@110uA |
- |
| Type |
| 1PCSNChannel |
- |
| Input Capacitance (Ciss@Vds) |
| 4.1nF@10V |
- |
| Total Gate Charge (Qg@Vgs) |
| [email protected] |
- |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
N/A |
