Model Number |
BSC046N02KSGAUMA1 |
IGT60R190D1S |
Model Name |
Infineon Technologies BSC046N02KSGAUMA1 |
Infineon Technologies IGT60R190D1S |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
20V 4.6mΩ@50A,4.5V 1.2V@110uA 1PCSNChannel TDSON-8 MOSFETs ROHS |
600V 12.5A 55.5W 1.6V@960uA 1PCSNChannel HSOF-8-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TDSON-8 |
HSOF-8-3 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
- |
Drain Source Voltage (Vdss) |
20V |
600V |
Continuous Drain Current (Id) |
19A;80A |
12.5A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
4.6mΩ@50A,4.5V |
- |
Power Dissipation (Pd) |
2.8W;48W |
55.5W |
Gate Threshold Voltage (Vgs(th)@Id) |
1.2V@110uA |
1.6V@960uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
4.1nF@10V |
N/A |
Total Gate Charge (Qg@Vgs) |
[email protected] |
N/A |
Operating Temperature |
-55℃~+150℃@(Tj) |
N/A |