Compare Infineon Technologies – BSC046N02KSGAUMA1 vs Infineon Technologies – IPB083N10N3G Specifications

BSC046N02KSGAUMA1 IPB083N10N3G
Model Number
BSC046N02KSGAUMA1 IPB083N10N3G
Model Name
Infineon Technologies BSC046N02KSGAUMA1 Infineon Technologies IPB083N10N3G
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
20V 4.6mΩ@50A,4.5V 1.2V@110uA 1PCSNChannel TDSON-8 MOSFETs ROHS 100V 80A 8.3mΩ@10V,73A 125W 3.5V@75uA 1PCSNChannel TO-263-2 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 2.028 grams / 0.071536 oz
Package / Case
TDSON-8 TO-263-2
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
20V 100V
Continuous Drain Current (Id)
19A;80A 80A
Drain Source On Resistance (RDS(on)@Vgs,Id)
4.6mΩ@50A,4.5V 8.3mΩ@10V,73A
Power Dissipation (Pd)
2.8W;48W 125W
Gate Threshold Voltage (Vgs(th)@Id)
1.2V@110uA 3.5V@75uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
4.1nF@10V N/A
Total Gate Charge (Qg@Vgs)
[email protected] N/A
Operating Temperature
-55℃~+150℃@(Tj) N/A

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