Compare Infineon Technologies – BSC046N02KSGAUMA1 vs Infineon Technologies – IPC100N04S52R8ATMA1 Specifications

BSC046N02KSGAUMA1 IPC100N04S52R8ATMA1
Model Number
BSC046N02KSGAUMA1 IPC100N04S52R8ATMA1
Model Name
Infineon Technologies BSC046N02KSGAUMA1 Infineon Technologies IPC100N04S52R8ATMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
20V 4.6mΩ@50A,4.5V 1.2V@110uA 1PCSNChannel TDSON-8 MOSFETs ROHS 40V 100A 2.8mΩ@50A,10V 75W 3.4V@30uA 1PCSNChannel TDSON-8 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 0.375 grams / 0.013228 oz
Package / Case
TDSON-8 TDSON-8
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
20V 40V
Continuous Drain Current (Id)
19A;80A 100A
Drain Source On Resistance (RDS(on)@Vgs,Id)
4.6mΩ@50A,4.5V 2.8mΩ@50A,10V
Power Dissipation (Pd)
2.8W;48W 75W
Gate Threshold Voltage (Vgs(th)@Id)
1.2V@110uA 3.4V@30uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
4.1nF@10V 2.6nF@25V
Total Gate Charge (Qg@Vgs)
[email protected] 45nC@10V
Operating Temperature
-55℃~+150℃@(Tj) -55℃~+175℃@(Tj)

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