Model Number |
BSC046N02KSGAUMA1 |
IPD80R1K4P7 |
Model Name |
Infineon Technologies BSC046N02KSGAUMA1 |
Infineon Technologies IPD80R1K4P7 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
20V 4.6mΩ@50A,4.5V 1.2V@110uA 1PCSNChannel TDSON-8 MOSFETs ROHS |
800V 4A 1.4Ω@10V,1.4A 32W 3.5V@700uA 1PCSNChannel TO-252-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
0.430 grams / 0.015168 oz |
Package / Case |
TDSON-8 |
TO-252-3 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
20V |
800V |
Continuous Drain Current (Id) |
19A;80A |
4A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
4.6mΩ@50A,4.5V |
1.4Ω@10V,1.4A |
Power Dissipation (Pd) |
2.8W;48W |
32W |
Gate Threshold Voltage (Vgs(th)@Id) |
1.2V@110uA |
3.5V@700uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
4.1nF@10V |
250pF@500V |
Total Gate Charge (Qg@Vgs) |
[email protected] |
10nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |