Compare Infineon Technologies – BSC046N02KSGAUMA1 vs Infineon Technologies – IPD80R2K4P7ATMA1 Specifications

BSC046N02KSGAUMA1 IPD80R2K4P7ATMA1
Model Number
BSC046N02KSGAUMA1 IPD80R2K4P7ATMA1
Model Name
Infineon Technologies BSC046N02KSGAUMA1 Infineon Technologies IPD80R2K4P7ATMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
20V 4.6mΩ@50A,4.5V 1.2V@110uA 1PCSNChannel TDSON-8 MOSFETs ROHS 800V 2.5A 2.4Ω@800mA,10V 22W 3.5V@40uA 1PCSNChannel TO-252-3 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 0.374 grams / 0.013192 oz
Package / Case
TDSON-8 TO-252-3
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
20V 800V
Continuous Drain Current (Id)
19A;80A 2.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)
4.6mΩ@50A,4.5V 2.4Ω@800mA,10V
Power Dissipation (Pd)
2.8W;48W 22W
Gate Threshold Voltage (Vgs(th)@Id)
1.2V@110uA 3.5V@40uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
4.1nF@10V 150pF@500V
Total Gate Charge (Qg@Vgs)
[email protected] 7.5nC@10V
Operating Temperature
-55℃~+150℃@(Tj) -55℃~+150℃@(Tj)

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