Compare Infineon Technologies – BSP88L6327 vs Infineon Technologies – IGLD60R190D1SAUMA1 Specifications

BSP88L6327 IGLD60R190D1SAUMA1
Model Number
BSP88L6327 IGLD60R190D1SAUMA1
Model Name
Infineon Technologies BSP88L6327 Infineon Technologies IGLD60R190D1SAUMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
240V 350mA 6Ω@350mA,10V 1.8W 1.4V@108uA 1PCSNChannel SOT-223-4 MOSFETs ROHS 600V 10A 62.5W 1.6V@960uA 1PCSNChannel LSON-8 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.000 grams / 0.035274 oz
Package / Case
SOT-223-4 LSON-8
Package / Arrange
Bag-packed Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
240V 600V
Continuous Drain Current (Id)
350mA 10A
Drain Source On Resistance (RDS(on)@Vgs,Id)
6Ω@350mA,10V N/A
Power Dissipation (Pd)
1.8W 62.5W
Gate Threshold Voltage (Vgs(th)@Id)
1.4V@108uA 1.6V@960uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
95pF@25V 157pF@400V
Total Gate Charge (Qg@Vgs)
6.8nC@10V N/A
Operating Temperature
-55℃~+150℃@(Tj) -55℃~+150℃@(Tj)

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