| Model Number |
| BSP88L6327 |
IPD80R3K3P7ATMA1 |
| Model Name |
| Infineon Technologies BSP88L6327 |
Infineon Technologies IPD80R3K3P7ATMA1 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 240V 350mA 6Ω@350mA,10V 1.8W 1.4V@108uA 1PCSNChannel SOT-223-4 MOSFETs ROHS |
800V 1.9A 3.3Ω@590mA,10V 18W 3.5V@30uA 1PCSNChannel TO-252-3 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| SOT-223-4 |
TO-252-3 |
| Package / Arrange |
| Bag-packed |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 240V |
800V |
| Continuous Drain Current (Id) |
| 350mA |
1.9A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 6Ω@350mA,10V |
3.3Ω@590mA,10V |
| Power Dissipation (Pd) |
| 1.8W |
18W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 1.4V@108uA |
3.5V@30uA |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 95pF@25V |
120pF@500V |
| Total Gate Charge (Qg@Vgs) |
| 6.8nC@10V |
5.8nC@10V |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |
