| Model Number |
| BSZ088N03LSG |
IPB120N06S4-H1 |
| Model Name |
| Infineon Technologies BSZ088N03LSG |
Infineon Technologies IPB120N06S4-H1 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 30V 8.8mΩ@20A,10V 2.2V@250uA 1PCSNChannel TSDSON-8 MOSFETs ROHS |
TO-263-3 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TSDSON-8 |
TO-263-3 |
| Package / Arrange |
| Bag-packed |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 30V |
- |
| Continuous Drain Current (Id) |
| 12A;50A |
- |
| Power Dissipation (Pd) |
| 2.1W;35W |
- |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 8.8mΩ@20A,10V |
- |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 2.2V@250uA |
- |
| Type |
| 1PCSNChannel |
- |
| Input Capacitance (Ciss@Vds) |
| 1.7nF@15V |
- |
| Total Gate Charge (Qg@Vgs) |
| 21nC@10V |
- |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
N/A |
