Model Number |
BSZ088N03LSG |
IPB60R105CFD7 |
Model Name |
Infineon Technologies BSZ088N03LSG |
Infineon Technologies IPB60R105CFD7 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
30V 8.8mΩ@20A,10V 2.2V@250uA 1PCSNChannel TSDSON-8 MOSFETs ROHS |
650V 21A 89mΩ@10V,9.3A 106W 4V@470uA 1PCSNChannel TO-263-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TSDSON-8 |
TO-263-3 |
Package / Arrange |
Bag-packed |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
- |
Drain Source Voltage (Vdss) |
30V |
650V |
Continuous Drain Current (Id) |
12A;50A |
21A |
Power Dissipation (Pd) |
2.1W;35W |
106W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
8.8mΩ@20A,10V |
89mΩ@10V,9.3A |
Gate Threshold Voltage (Vgs(th)@Id) |
2.2V@250uA |
4V@470uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
1.7nF@15V |
1.752nF@400V |
Total Gate Charge (Qg@Vgs) |
21nC@10V |
42nC@0~10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |