| Model Number |
| BSZ088N03LSG |
IPB77N06S2-12 |
| Model Name |
| Infineon Technologies BSZ088N03LSG |
Infineon Technologies IPB77N06S2-12 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 30V 8.8mΩ@20A,10V 2.2V@250uA 1PCSNChannel TSDSON-8 MOSFETs ROHS |
55V 77A 9.5mΩ@10V,38A 158W 3V@93uA 1PCSNChannel TO-263 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TSDSON-8 |
TO-263 |
| Package / Arrange |
| Bag-packed |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
- |
| Drain Source Voltage (Vdss) |
| 30V |
55V |
| Continuous Drain Current (Id) |
| 12A;50A |
77A |
| Power Dissipation (Pd) |
| 2.1W;35W |
158W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 8.8mΩ@20A,10V |
9.5mΩ@10V,38A |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 2.2V@250uA |
3V@93uA |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 1.7nF@15V |
1.77nF@25V |
| Total Gate Charge (Qg@Vgs) |
| 21nC@10V |
45nC@0~10V |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |
