Compare Infineon Technologies – BSZ0909NSATMA1 vs Infineon Technologies – IPD031N03LGATMA1 Specifications

BSZ0909NSATMA1 IPD031N03LGATMA1
Model Number
BSZ0909NSATMA1 IPD031N03LGATMA1
Model Name
Infineon Technologies BSZ0909NSATMA1 Infineon Technologies IPD031N03LGATMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
34V 12mΩ@20A,10V 2V@250uA 1PCSNChannel TSDSON-8 MOSFETs ROHS 30V 90A 3.1mΩ@30A,10V 94W 2.2V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
0.450 grams / 0.015873 oz 1.000 grams / 0.035274 oz
Package / Case
TSDSON-8 TO-252
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
34V 30V
Continuous Drain Current (Id)
9A;36A 90A
Power Dissipation (Pd)
2.1W;25W 94W
Drain Source On Resistance (RDS(on)@Vgs,Id)
12mΩ@20A,10V 3.1mΩ@30A,10V
Gate Threshold Voltage (Vgs(th)@Id)
2V@250uA 2.2V@250uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
1.31nF@15V 5.3nF@15V
Total Gate Charge (Qg@Vgs)
17nC@10V 51nC@10V
Operating Temperature
-55℃~+150℃@(Tj) -55℃~+175℃@(Tj)

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