Model Number |
BSZ0909NSATMA1 |
IPD053N06NATMA1 |
Model Name |
Infineon Technologies BSZ0909NSATMA1 |
Infineon Technologies IPD053N06NATMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
34V 12mΩ@20A,10V 2V@250uA 1PCSNChannel TSDSON-8 MOSFETs ROHS |
60V 5.3mΩ@45A,10V 2.8V@36uA 1PCSNChannel TO-252-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
0.450 grams / 0.015873 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TSDSON-8 |
TO-252-3 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
34V |
60V |
Continuous Drain Current (Id) |
9A;36A |
18A;45A |
Power Dissipation (Pd) |
2.1W;25W |
3W;83W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
12mΩ@20A,10V |
5.3mΩ@45A,10V |
Gate Threshold Voltage (Vgs(th)@Id) |
2V@250uA |
2.8V@36uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
1.31nF@15V |
2nF@30V |
Total Gate Charge (Qg@Vgs) |
17nC@10V |
27nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |