| Model Number |
| BSZ0909NSATMA1 |
IPP65R190E6XKSA1 |
| Model Name |
| Infineon Technologies BSZ0909NSATMA1 |
Infineon Technologies IPP65R190E6XKSA1 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 34V 12mΩ@20A,10V 2V@250uA 1PCSNChannel TSDSON-8 MOSFETs ROHS |
650V 20.2A 151W 190mΩ@7.3A,10V 3.5V@730uA 1PCSNChannel TO-220-3 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 0.450 grams / 0.015873 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TSDSON-8 |
TO-220-3 |
| Package / Arrange |
| Tape & Reel (TR) |
Tube-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 34V |
650V |
| Continuous Drain Current (Id) |
| 9A;36A |
20.2A |
| Power Dissipation (Pd) |
| 2.1W;25W |
151W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 12mΩ@20A,10V |
190mΩ@7.3A,10V |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 2V@250uA |
3.5V@730uA |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 1.31nF@15V |
1.62nF@100V |
| Total Gate Charge (Qg@Vgs) |
| 17nC@10V |
73nC@10V |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |
