Compare Infineon Technologies – BSZ180P03NS3GATMA1 vs Infineon Technologies – BSC047N08NS3G Specifications

BSZ180P03NS3GATMA1 BSC047N08NS3G
Model Number
BSZ180P03NS3GATMA1 BSC047N08NS3G
Model Name
Infineon Technologies BSZ180P03NS3GATMA1 Infineon Technologies BSC047N08NS3G
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
30V 18mΩ@20A,10V 3.1V@48uA 1PCSPChannel TSDSON-8 MOSFETs ROHS 80V 100A 4.7mΩ@10V,50A 2.5W 3.5V@90uA 1PCSNChannel TDSON-8(5.2x5.9) MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 0.144 grams / 0.005079 oz
Package / Case
TSDSON-8 TDSON-8(5.2x5.9)
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
30V 80V
Continuous Drain Current (Id)
9A;39.6A 100A
Drain Source On Resistance (RDS(on)@Vgs,Id)
18mΩ@20A,10V 4.7mΩ@10V,50A
Power Dissipation (Pd)
2.1W;40W 2.5W
Gate Threshold Voltage (Vgs(th)@Id)
3.1V@48uA 3.5V@90uA
Type
1PCSPChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
2.22nF@15V -
Total Gate Charge (Qg@Vgs)
30nC@10V -
Operating Temperature
-55℃~+150℃@(Tj) -

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