Model Number |
BSZ180P03NS3GATMA1 |
F415MR12W2M1B76BOMA1 |
Model Name |
Infineon Technologies BSZ180P03NS3GATMA1 |
Infineon Technologies F415MR12W2M1B76BOMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
30V 18mΩ@20A,10V 3.1V@48uA 1PCSPChannel TSDSON-8 MOSFETs ROHS |
1.2kV 75A 15mΩ@75A,15V 5.55V@30mA 4PCSN-Channel AG-EASY1B-2 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TSDSON-8 |
AG-EASY1B-2 |
Package / Arrange |
Tape & Reel (TR) |
Tray |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
30V |
1.2kV |
Continuous Drain Current (Id) |
9A;39.6A |
75A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
18mΩ@20A,10V |
15mΩ@75A,15V |
Power Dissipation (Pd) |
2.1W;40W |
N/A |
Gate Threshold Voltage (Vgs(th)@Id) |
3.1V@48uA |
5.55V@30mA |
Type |
1PCSPChannel |
4PCSN-Channel |
Input Capacitance (Ciss@Vds) |
2.22nF@15V |
5.52nF@800V |
Total Gate Charge (Qg@Vgs) |
30nC@10V |
186nC@15V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-40℃~+150℃@(Tj) |