Compare Infineon Technologies – BSZ180P03NS3GATMA1 vs Infineon Technologies – F415MR12W2M1B76BOMA1 Specifications

BSZ180P03NS3GATMA1 F415MR12W2M1B76BOMA1
Model Number
BSZ180P03NS3GATMA1 F415MR12W2M1B76BOMA1
Model Name
Infineon Technologies BSZ180P03NS3GATMA1 Infineon Technologies F415MR12W2M1B76BOMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
30V 18mΩ@20A,10V 3.1V@48uA 1PCSPChannel TSDSON-8 MOSFETs ROHS 1.2kV 75A 15mΩ@75A,15V 5.55V@30mA 4PCSN-Channel AG-EASY1B-2 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.000 grams / 0.035274 oz
Package / Case
TSDSON-8 AG-EASY1B-2
Package / Arrange
Tape & Reel (TR) Tray
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
30V 1.2kV
Continuous Drain Current (Id)
9A;39.6A 75A
Drain Source On Resistance (RDS(on)@Vgs,Id)
18mΩ@20A,10V 15mΩ@75A,15V
Power Dissipation (Pd)
2.1W;40W N/A
Gate Threshold Voltage (Vgs(th)@Id)
3.1V@48uA 5.55V@30mA
Type
1PCSPChannel 4PCSN-Channel
Input Capacitance (Ciss@Vds)
2.22nF@15V 5.52nF@800V
Total Gate Charge (Qg@Vgs)
30nC@10V 186nC@15V
Operating Temperature
-55℃~+150℃@(Tj) -40℃~+150℃@(Tj)

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