Compare Infineon Technologies – BSZ180P03NS3GATMA1 vs Infineon Technologies – IPB097N08N3G Specifications

BSZ180P03NS3GATMA1 IPB097N08N3G
Model Number
BSZ180P03NS3GATMA1 IPB097N08N3G
Model Name
Infineon Technologies BSZ180P03NS3GATMA1 Infineon Technologies IPB097N08N3G
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
30V 18mΩ@20A,10V 3.1V@48uA 1PCSPChannel TSDSON-8 MOSFETs ROHS 80V 70A 9.7mΩ@46A,10V 100W 3.5V@46uA 1PCSNChannel TO-263-3 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.000 grams / 0.035274 oz
Package / Case
TSDSON-8 TO-263-3
Package / Arrange
Tape & Reel (TR) Bag-packed
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
30V 80V
Continuous Drain Current (Id)
9A;39.6A 70A
Drain Source On Resistance (RDS(on)@Vgs,Id)
18mΩ@20A,10V 9.7mΩ@46A,10V
Power Dissipation (Pd)
2.1W;40W 100W
Gate Threshold Voltage (Vgs(th)@Id)
3.1V@48uA 3.5V@46uA
Type
1PCSPChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
2.22nF@15V 2.41nF@40V
Total Gate Charge (Qg@Vgs)
30nC@10V 35nC@10V
Operating Temperature
-55℃~+150℃@(Tj) -55℃~+175℃@(Tj)

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