Model Number |
BSZ180P03NS3GATMA1 |
IPB180N06S4H1ATMA2 |
Model Name |
Infineon Technologies BSZ180P03NS3GATMA1 |
Infineon Technologies IPB180N06S4H1ATMA2 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
30V 18mΩ@20A,10V 3.1V@48uA 1PCSPChannel TSDSON-8 MOSFETs ROHS |
60V 180A 250W 1.7mΩ@100A,10V 4V@200uA 1PCSNChannel TO-263-7 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
2.520 grams / 0.08889 oz |
Package / Case |
TSDSON-8 |
TO-263-7 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
30V |
60V |
Continuous Drain Current (Id) |
9A;39.6A |
180A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
18mΩ@20A,10V |
1.7mΩ@100A,10V |
Power Dissipation (Pd) |
2.1W;40W |
250W |
Gate Threshold Voltage (Vgs(th)@Id) |
3.1V@48uA |
4V@200uA |
Type |
1PCSPChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
2.22nF@15V |
21.9nF@25V |
Total Gate Charge (Qg@Vgs) |
30nC@10V |
270nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |