Model Number |
BSZ180P03NS3GATMA1 |
IPB60R055CFD7ATMA1 |
Model Name |
Infineon Technologies BSZ180P03NS3GATMA1 |
Infineon Technologies IPB60R055CFD7ATMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
30V 18mΩ@20A,10V 3.1V@48uA 1PCSPChannel TSDSON-8 MOSFETs ROHS |
650V 38A 178W 55mΩ@18A,10V 4.5V@900uA 1PCSNChannel TO-263 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.580 grams / 0.055733 oz |
Package / Case |
TSDSON-8 |
TO-263 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
30V |
650V |
Continuous Drain Current (Id) |
9A;39.6A |
38A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
18mΩ@20A,10V |
55mΩ@18A,10V |
Power Dissipation (Pd) |
2.1W;40W |
178W |
Gate Threshold Voltage (Vgs(th)@Id) |
3.1V@48uA |
4.5V@900uA |
Type |
1PCSPChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
2.22nF@15V |
3.194nF@400V |
Total Gate Charge (Qg@Vgs) |
30nC@10V |
79nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+150℃@(Tj) |