Compare Infineon Technologies – BSZ180P03NS3GATMA1 vs Infineon Technologies – IPB80N06S2L06ATMA2 Specifications

BSZ180P03NS3GATMA1 IPB80N06S2L06ATMA2
Model Number
BSZ180P03NS3GATMA1 IPB80N06S2L06ATMA2
Model Name
Infineon Technologies BSZ180P03NS3GATMA1 Infineon Technologies IPB80N06S2L06ATMA2
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
30V 18mΩ@20A,10V 3.1V@48uA 1PCSPChannel TSDSON-8 MOSFETs ROHS 55V 80A 250W 6mΩ@69A,10V 2V@180uA 1PCSNChannel TO-263 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.000 grams / 0.035274 oz
Package / Case
TSDSON-8 TO-263
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
30V 55V
Continuous Drain Current (Id)
9A;39.6A 80A
Drain Source On Resistance (RDS(on)@Vgs,Id)
18mΩ@20A,10V 6mΩ@69A,10V
Power Dissipation (Pd)
2.1W;40W 250W
Gate Threshold Voltage (Vgs(th)@Id)
3.1V@48uA 2V@180uA
Type
1PCSPChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
2.22nF@15V 3.8nF@25V
Total Gate Charge (Qg@Vgs)
30nC@10V 150nC@10V
Operating Temperature
-55℃~+150℃@(Tj) -55℃~+175℃@(Tj)

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