Model Number |
BSZ180P03NS3GATMA1 |
IPD30N03S2L20ATMA1 |
Model Name |
Infineon Technologies BSZ180P03NS3GATMA1 |
Infineon Technologies IPD30N03S2L20ATMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
30V 18mΩ@20A,10V 3.1V@48uA 1PCSPChannel TSDSON-8 MOSFETs ROHS |
30V 30A 20mΩ@10V,18A 60W 2V@23uA 1PCSNChannel TO-252 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TSDSON-8 |
TO-252 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
30V |
30V |
Continuous Drain Current (Id) |
9A;39.6A |
30A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
18mΩ@20A,10V |
20mΩ@10V,18A |
Power Dissipation (Pd) |
2.1W;40W |
60W |
Gate Threshold Voltage (Vgs(th)@Id) |
3.1V@48uA |
2V@23uA |
Type |
1PCSPChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
2.22nF@15V |
530pF@25V |
Total Gate Charge (Qg@Vgs) |
30nC@10V |
19nC@10V |
Operating Temperature |
-55℃~+150℃@(Tj) |
-55℃~+175℃@(Tj) |