Compare Infineon Technologies – BSZ180P03NS3GATMA1 vs Infineon Technologies – IPD50N03S4L06ATMA1 Specifications

BSZ180P03NS3GATMA1 IPD50N03S4L06ATMA1
Model Number
BSZ180P03NS3GATMA1 IPD50N03S4L06ATMA1
Model Name
Infineon Technologies BSZ180P03NS3GATMA1 Infineon Technologies IPD50N03S4L06ATMA1
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
30V 18mΩ@20A,10V 3.1V@48uA 1PCSPChannel TSDSON-8 MOSFETs ROHS 30V 50A 5.5mΩ@50A,10V 56W 2.2V@20uA 1PCSNChannel TO-252 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 0.500 grams / 0.017637 oz
Package / Case
TSDSON-8 TO-252
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
30V 30V
Continuous Drain Current (Id)
9A;39.6A 50A
Drain Source On Resistance (RDS(on)@Vgs,Id)
18mΩ@20A,10V 5.5mΩ@50A,10V
Power Dissipation (Pd)
2.1W;40W 56W
Gate Threshold Voltage (Vgs(th)@Id)
3.1V@48uA 2.2V@20uA
Type
1PCSPChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
2.22nF@15V 2.33nF@25V
Total Gate Charge (Qg@Vgs)
30nC@10V 31nC@10V
Operating Temperature
-55℃~+150℃@(Tj) -55℃~+175℃@(Tj)

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