Model Number |
BSZ180P03NS3GATMA1 |
IPS80R900P7 |
Model Name |
Infineon Technologies BSZ180P03NS3GATMA1 |
Infineon Technologies IPS80R900P7 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
30V 18mΩ@20A,10V 3.1V@48uA 1PCSPChannel TSDSON-8 MOSFETs ROHS |
800V 6A 900mΩ@10V,2.2A 45W 3.5V@110uA 1PCSNChannel TO-251-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TSDSON-8 |
TO-251-3 |
Package / Arrange |
Tape & Reel (TR) |
Tube-packed |
Battery |
No |
No |
ECCN |
EAR99 |
- |
Drain Source Voltage (Vdss) |
30V |
800V |
Continuous Drain Current (Id) |
9A;39.6A |
6A |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
18mΩ@20A,10V |
900mΩ@10V,2.2A |
Power Dissipation (Pd) |
2.1W;40W |
45W |
Gate Threshold Voltage (Vgs(th)@Id) |
3.1V@48uA |
3.5V@110uA |
Type |
1PCSPChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
2.22nF@15V |
N/A |
Total Gate Charge (Qg@Vgs) |
30nC@10V |
N/A |
Operating Temperature |
-55℃~+150℃@(Tj) |
N/A |