Compare Infineon Technologies – BSZ180P03NS3GATMA1 vs Infineon Technologies – IPW50R190CE Specifications

BSZ180P03NS3GATMA1 IPW50R190CE
Model Number
BSZ180P03NS3GATMA1 IPW50R190CE
Model Name
Infineon Technologies BSZ180P03NS3GATMA1 Infineon Technologies IPW50R190CE
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
30V 18mΩ@20A,10V 3.1V@48uA 1PCSPChannel TSDSON-8 MOSFETs ROHS 500V 24.8A 152W 190mΩ@6.2A,13V 3.5V@510uA 1PCSNChannel TO-247-3-41 MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
1.000 grams / 0.035274 oz 1.000 grams / 0.035274 oz
Package / Case
TSDSON-8 TO-247-3-41
Package / Arrange
Tape & Reel (TR) Bag-packed
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
30V 500V
Continuous Drain Current (Id)
9A;39.6A 24.8A
Drain Source On Resistance (RDS(on)@Vgs,Id)
18mΩ@20A,10V 190mΩ@6.2A,13V
Power Dissipation (Pd)
2.1W;40W 152W
Gate Threshold Voltage (Vgs(th)@Id)
3.1V@48uA 3.5V@510uA
Type
1PCSPChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
2.22nF@15V 1.137nF@100V
Total Gate Charge (Qg@Vgs)
30nC@10V 47.2nC@10V
Operating Temperature
-55℃~+150℃@(Tj) -55℃~+150℃@(Tj)

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