| Model Number |
| BSZ180P03NS3GATMA1 |
IRFAE30 |
| Model Name |
| Infineon Technologies BSZ180P03NS3GATMA1 |
Infineon Technologies IRFAE30 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 30V 18mΩ@20A,10V 3.1V@48uA 1PCSPChannel TSDSON-8 MOSFETs ROHS |
- MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TSDSON-8 |
- |
| Package / Arrange |
| Tape & Reel (TR) |
Bag-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 30V |
N/A |
| Continuous Drain Current (Id) |
| 9A;39.6A |
N/A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 18mΩ@20A,10V |
N/A |
| Power Dissipation (Pd) |
| 2.1W;40W |
N/A |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 3.1V@48uA |
N/A |
| Type |
| 1PCSPChannel |
N/A |
| Input Capacitance (Ciss@Vds) |
| 2.22nF@15V |
N/A |
| Total Gate Charge (Qg@Vgs) |
| 30nC@10V |
N/A |
| Operating Temperature |
| -55℃~+150℃@(Tj) |
N/A |
