Model Number |
BSZ215CHXTMA1 |
IPD088N06N3 G |
Model Name |
Infineon Technologies BSZ215CHXTMA1 |
Infineon Technologies IPD088N06N3 G |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
20V 2.5W 55mΩ@5.1A,4.5V 1.4V@110uA 1PCSNChannel+1PCSPChannel TSDSON-8 MOSFETs ROHS |
60V 50A 71W 8.8mΩ@10V,50A 4V@34uA 1PCSNChannel TO-252-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
0.370 grams / 0.013051 oz |
Package / Case |
TSDSON-8 |
TO-252-3 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
- |
Drain Source Voltage (Vdss) |
20V |
60V |
Continuous Drain Current (Id) |
5.1A;3.2A |
50A |
Power Dissipation (Pd) |
2.5W |
71W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
55mΩ@5.1A,4.5V |
8.8mΩ@10V,50A |
Gate Threshold Voltage (Vgs(th)@Id) |
1.4V@110uA |
4V@34uA |
Type |
1PCSNChannel+1PCSPChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
419pF@10V |
N/A |
Total Gate Charge (Qg@Vgs) |
[email protected] |
N/A |
Operating Temperature |
-55℃~+175℃@(Tj) |
N/A |