Model Number |
BSZ215CHXTMA1 |
IPN80R1K4P7 |
Model Name |
Infineon Technologies BSZ215CHXTMA1 |
Infineon Technologies IPN80R1K4P7 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
20V 2.5W 55mΩ@5.1A,4.5V 1.4V@110uA 1PCSNChannel+1PCSPChannel TSDSON-8 MOSFETs ROHS |
800V 4A 7W 1.4Ω@10V,1.4A 3.5V@70uA 1PCSNChannel SOT-223-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
1.000 grams / 0.035274 oz |
0.183 grams / 0.006455 oz |
Package / Case |
TSDSON-8 |
SOT-223-3 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
20V |
800V |
Continuous Drain Current (Id) |
5.1A;3.2A |
4A |
Power Dissipation (Pd) |
2.5W |
7W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
55mΩ@5.1A,4.5V |
1.4Ω@10V,1.4A |
Gate Threshold Voltage (Vgs(th)@Id) |
1.4V@110uA |
3.5V@70uA |
Type |
1PCSNChannel+1PCSPChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
419pF@10V |
250pF@500V |
Total Gate Charge (Qg@Vgs) |
[email protected] |
10nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |