| Model Number |
| BSZ215CHXTMA1 |
IRFR1018EPBF |
| Model Name |
| Infineon Technologies BSZ215CHXTMA1 |
Infineon Technologies IRFR1018EPBF |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 20V 2.5W 55mΩ@5.1A,4.5V 1.4V@110uA 1PCSNChannel+1PCSPChannel TSDSON-8 MOSFETs ROHS |
60V 56A 110W 8.4mΩ@10V,47A 4V@100uA N Channel TO-252-2(DPAK) MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
0.481 grams / 0.016967 oz |
| Package / Case |
| TSDSON-8 |
TO-252-2(DPAK) |
| Package / Arrange |
| Tape & Reel (TR) |
Tube-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
- |
| Drain Source Voltage (Vdss) |
| 20V |
60V |
| Continuous Drain Current (Id) |
| 5.1A;3.2A |
56A |
| Power Dissipation (Pd) |
| 2.5W |
110W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 55mΩ@5.1A,4.5V |
8.4mΩ@10V,47A |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 1.4V@110uA |
4V@100uA |
| Type |
| 1PCSNChannel+1PCSPChannel |
N Channel |
| Input Capacitance (Ciss@Vds) |
| 419pF@10V |
N/A |
| Total Gate Charge (Qg@Vgs) |
| [email protected] |
N/A |
| Operating Temperature |
| -55℃~+175℃@(Tj) |
N/A |
