| Model Number |
| IMZA120R007M1HXKSA1 |
IPB60R250CP |
| Model Name |
| Infineon Technologies IMZA120R007M1HXKSA1 |
Infineon Technologies IPB60R250CP |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 1.2kV 225A 9.9mΩ@108A,18V 750W 5.2V@47mA 1PCSNChannel TO-247-4 MOSFETs ROHS |
600V 12A 104W 250mΩ@7.8A,10V 3.5V@520uA 1PCSNChannel TO-263 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 1.000 grams / 0.035274 oz |
1.000 grams / 0.035274 oz |
| Package / Case |
| TO-247-4 |
TO-263 |
| Package / Arrange |
| Tube-packed |
Bag-packed |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 1.2kV |
600V |
| Continuous Drain Current (Id) |
| 225A |
12A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 9.9mΩ@108A,18V |
250mΩ@7.8A,10V |
| Power Dissipation (Pd) |
| 750W |
104W |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 5.2V@47mA |
3.5V@520uA |
| Type |
| 1PCSNChannel |
1PCSNChannel |
| Input Capacitance (Ciss@Vds) |
| 9.17uF@25V |
1.2nF@100V |
| Total Gate Charge (Qg@Vgs) |
| 220nC@18V |
35nC@10V |
| Operating Temperature |
| -55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |
