Compare Infineon Technologies – IPB038N12N3GATMA1 vs Infineon Technologies – AUIRL7732S2TR Specifications

IPB038N12N3GATMA1 AUIRL7732S2TR
Model Number
IPB038N12N3GATMA1 AUIRL7732S2TR
Model Name
Infineon Technologies IPB038N12N3GATMA1 Infineon Technologies AUIRL7732S2TR
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
120V 120A 300W 3.8mΩ@100A,10V 4V@270uA 1PCSNChannel TO-263-3 MOSFETs ROHS 40V 14A 6.6mΩ@35A,10V 2.5V@50uA 1PCSNChannel DirectFET MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
2.500 grams / 0.088185 oz 1.000 grams / 0.035274 oz
Package / Case
TO-263-3 DirectFET
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
120V 40V
Continuous Drain Current (Id)
120A 14A
Power Dissipation (Pd)
300W 2.2W;41W
Drain Source On Resistance (RDS(on)@Vgs,Id)
3.8mΩ@100A,10V 6.6mΩ@35A,10V
Gate Threshold Voltage (Vgs(th)@Id)
4V@270uA 2.5V@50uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
13.8nF@60V 2.02nF@25V
Total Gate Charge (Qg@Vgs)
211nC@10V [email protected]
Operating Temperature
-55℃~+175℃@(Tj) -55℃~+175℃@(Tj)

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