| Model Number |
| IPB038N12N3GATMA1 |
BSD223P H6327 |
| Model Name |
| Infineon Technologies IPB038N12N3GATMA1 |
Infineon Technologies BSD223P H6327 |
| Category |
| MOSFETs |
MOSFETs |
| Brand |
| Infineon Technologies |
Infineon Technologies |
| Description |
| 120V 120A 300W 3.8mΩ@100A,10V 4V@270uA 1PCSNChannel TO-263-3 MOSFETs ROHS |
SOT-363-6 MOSFETs ROHS |
| RoHS |
| Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
| Unit |
| Piece |
Piece |
| Weight: |
| 2.500 grams / 0.088185 oz |
0.240 grams / 0.008466 oz |
| Package / Case |
| TO-263-3 |
SOT-363-6 |
| Package / Arrange |
| Tape & Reel (TR) |
Tape & Reel (TR) |
| Battery |
| No |
No |
| ECCN |
| EAR99 |
EAR99 |
| Drain Source Voltage (Vdss) |
| 120V |
- |
| Continuous Drain Current (Id) |
| 120A |
- |
| Power Dissipation (Pd) |
| 300W |
- |
| Drain Source On Resistance (RDS(on)@Vgs,Id) |
| 3.8mΩ@100A,10V |
- |
| Gate Threshold Voltage (Vgs(th)@Id) |
| 4V@270uA |
- |
| Type |
| 1PCSNChannel |
- |
| Input Capacitance (Ciss@Vds) |
| 13.8nF@60V |
- |
| Total Gate Charge (Qg@Vgs) |
| 211nC@10V |
- |
| Operating Temperature |
| -55℃~+175℃@(Tj) |
N/A |
