Compare Infineon Technologies – IPB038N12N3GATMA1 vs Infineon Technologies – BSZ019N03LS Specifications

IPB038N12N3GATMA1 BSZ019N03LS
Model Number
IPB038N12N3GATMA1 BSZ019N03LS
Model Name
Infineon Technologies IPB038N12N3GATMA1 Infineon Technologies BSZ019N03LS
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
120V 120A 300W 3.8mΩ@100A,10V 4V@270uA 1PCSNChannel TO-263-3 MOSFETs ROHS 30V 22A 1.9mΩ@10V,20A 2.1W 2V@250uA 1PCSNChannel TSDSON-8(3.3x3.3) MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
2.500 grams / 0.088185 oz 0.100 grams / 0.003527 oz
Package / Case
TO-263-3 TSDSON-8(3.3x3.3)
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
120V 30V
Continuous Drain Current (Id)
120A 22A
Power Dissipation (Pd)
300W 2.1W
Drain Source On Resistance (RDS(on)@Vgs,Id)
3.8mΩ@100A,10V 1.9mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)@Id)
4V@270uA 2V@250uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
13.8nF@60V N/A
Total Gate Charge (Qg@Vgs)
211nC@10V N/A
Operating Temperature
-55℃~+175℃@(Tj) N/A

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