Model Number |
IPB038N12N3GATMA1 |
IPA60R750E6 |
Model Name |
Infineon Technologies IPB038N12N3GATMA1 |
Infineon Technologies IPA60R750E6 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
120V 120A 300W 3.8mΩ@100A,10V 4V@270uA 1PCSNChannel TO-263-3 MOSFETs ROHS |
600V 5.7A 680mΩ@10V,2A 27W 3V@170uA 1PCSNChannel TO-220 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
2.500 grams / 0.088185 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TO-263-3 |
TO-220 |
Package / Arrange |
Tape & Reel (TR) |
Tube-packed |
Battery |
No |
No |
ECCN |
EAR99 |
- |
Drain Source Voltage (Vdss) |
120V |
600V |
Continuous Drain Current (Id) |
120A |
5.7A |
Power Dissipation (Pd) |
300W |
27W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
3.8mΩ@100A,10V |
680mΩ@10V,2A |
Gate Threshold Voltage (Vgs(th)@Id) |
4V@270uA |
3V@170uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
13.8nF@60V |
373pF@100V |
Total Gate Charge (Qg@Vgs) |
211nC@10V |
17.2nC@0~10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |