Model Number |
IPB038N12N3GATMA1 |
IPA65R225C7 |
Model Name |
Infineon Technologies IPB038N12N3GATMA1 |
Infineon Technologies IPA65R225C7 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
120V 120A 300W 3.8mΩ@100A,10V 4V@270uA 1PCSNChannel TO-263-3 MOSFETs ROHS |
650V 7A 225mΩ@4.8A,10V 29W 4V@240uA 1PCSNChannel TO-220FP-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
2.500 grams / 0.088185 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TO-263-3 |
TO-220FP-3 |
Package / Arrange |
Tape & Reel (TR) |
Tube-packed |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
120V |
650V |
Continuous Drain Current (Id) |
120A |
7A |
Power Dissipation (Pd) |
300W |
29W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
3.8mΩ@100A,10V |
225mΩ@4.8A,10V |
Gate Threshold Voltage (Vgs(th)@Id) |
4V@270uA |
4V@240uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
13.8nF@60V |
996pF@400V |
Total Gate Charge (Qg@Vgs) |
211nC@10V |
20nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |