Model Number |
IPB038N12N3GATMA1 |
IPB100N06S2L05ATMA2 |
Model Name |
Infineon Technologies IPB038N12N3GATMA1 |
Infineon Technologies IPB100N06S2L05ATMA2 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
120V 120A 300W 3.8mΩ@100A,10V 4V@270uA 1PCSNChannel TO-263-3 MOSFETs ROHS |
55V 100A 300W 4.4mΩ@80A,10V 2V@250uA 1PCSNChannel TO-263 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
2.500 grams / 0.088185 oz |
2.425 grams / 0.085539 oz |
Package / Case |
TO-263-3 |
TO-263 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
120V |
55V |
Continuous Drain Current (Id) |
120A |
100A |
Power Dissipation (Pd) |
300W |
300W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
3.8mΩ@100A,10V |
4.4mΩ@80A,10V |
Gate Threshold Voltage (Vgs(th)@Id) |
4V@270uA |
2V@250uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
13.8nF@60V |
5.66nF@25V |
Total Gate Charge (Qg@Vgs) |
211nC@10V |
230nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+175℃@(Tj) |