Model Number |
IPB038N12N3GATMA1 |
IPTG210N25NM3FDATMA1 |
Model Name |
Infineon Technologies IPB038N12N3GATMA1 |
Infineon Technologies IPTG210N25NM3FDATMA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
120V 120A 300W 3.8mΩ@100A,10V 4V@270uA 1PCSNChannel TO-263-3 MOSFETs ROHS |
250V 21mΩ@69A,10V 4V@267uA 1PCSNChannel HSOG-8 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
2.500 grams / 0.088185 oz |
1.000 grams / 0.035274 oz |
Package / Case |
TO-263-3 |
HSOG-8 |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
120V |
250V |
Continuous Drain Current (Id) |
120A |
7.7A;77A |
Power Dissipation (Pd) |
300W |
3.8W;375W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
3.8mΩ@100A,10V |
21mΩ@69A,10V |
Gate Threshold Voltage (Vgs(th)@Id) |
4V@270uA |
4V@267uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
13.8nF@60V |
7nF@125V |
Total Gate Charge (Qg@Vgs) |
211nC@10V |
81nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+175℃@(Tj) |