Model Number |
IPB038N12N3GATMA1 |
IPW60R080P7XKSA1 |
Model Name |
Infineon Technologies IPB038N12N3GATMA1 |
Infineon Technologies IPW60R080P7XKSA1 |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
120V 120A 300W 3.8mΩ@100A,10V 4V@270uA 1PCSNChannel TO-263-3 MOSFETs ROHS |
600V 37A 129W 80mΩ@11.8A,10V 4V@590uA 1PCSNChannel TO-247-3 MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
2.500 grams / 0.088185 oz |
8.550 grams / 0.301593 oz |
Package / Case |
TO-263-3 |
TO-247-3 |
Package / Arrange |
Tape & Reel (TR) |
Tube-packed |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
120V |
600V |
Continuous Drain Current (Id) |
120A |
37A |
Power Dissipation (Pd) |
300W |
129W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
3.8mΩ@100A,10V |
80mΩ@11.8A,10V |
Gate Threshold Voltage (Vgs(th)@Id) |
4V@270uA |
4V@590uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
13.8nF@60V |
2.18nF@400V |
Total Gate Charge (Qg@Vgs) |
211nC@10V |
51nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-55℃~+150℃@(Tj) |