Compare Infineon Technologies – IPB038N12N3GATMA1 vs Infineon Technologies – IRF6674TRPBF Specifications

IPB038N12N3GATMA1 IRF6674TRPBF
Model Number
IPB038N12N3GATMA1 IRF6674TRPBF
Model Name
Infineon Technologies IPB038N12N3GATMA1 Infineon Technologies IRF6674TRPBF
Category
MOSFETs MOSFETs
Brand
Infineon Technologies Infineon Technologies
Description
120V 120A 300W 3.8mΩ@100A,10V 4V@270uA 1PCSNChannel TO-263-3 MOSFETs ROHS 60V 11mΩ@10V,13.4A 4.9V@100uA 1PCSNChannel DirectFET MOSFETs ROHS
RoHS
Lead free / RoHS Compliant Lead free / RoHS Compliant
Unit
Piece Piece
Weight:
2.500 grams / 0.088185 oz 0.300 grams / 0.010582 oz
Package / Case
TO-263-3 DirectFET
Package / Arrange
Tape & Reel (TR) Tape & Reel (TR)
Battery
No No
ECCN
EAR99 EAR99
Drain Source Voltage (Vdss)
120V 60V
Continuous Drain Current (Id)
120A 13.4A;67A
Power Dissipation (Pd)
300W 3.6W;89W
Drain Source On Resistance (RDS(on)@Vgs,Id)
3.8mΩ@100A,10V 11mΩ@10V,13.4A
Gate Threshold Voltage (Vgs(th)@Id)
4V@270uA 4.9V@100uA
Type
1PCSNChannel 1PCSNChannel
Input Capacitance (Ciss@Vds)
13.8nF@60V 1.35nF@25V
Total Gate Charge (Qg@Vgs)
211nC@10V 36nC@10V
Operating Temperature
-55℃~+175℃@(Tj) -40℃~+150℃@(Tj)

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