Model Number |
IPB038N12N3GATMA1 |
IRF6674TRPBF |
Model Name |
Infineon Technologies IPB038N12N3GATMA1 |
Infineon Technologies IRF6674TRPBF |
Category |
MOSFETs |
MOSFETs |
Brand |
Infineon Technologies |
Infineon Technologies |
Description |
120V 120A 300W 3.8mΩ@100A,10V 4V@270uA 1PCSNChannel TO-263-3 MOSFETs ROHS |
60V 11mΩ@10V,13.4A 4.9V@100uA 1PCSNChannel DirectFET MOSFETs ROHS |
RoHS |
Lead free / RoHS Compliant |
Lead free / RoHS Compliant |
Unit |
Piece |
Piece |
Weight: |
2.500 grams / 0.088185 oz |
0.300 grams / 0.010582 oz |
Package / Case |
TO-263-3 |
DirectFET |
Package / Arrange |
Tape & Reel (TR) |
Tape & Reel (TR) |
Battery |
No |
No |
ECCN |
EAR99 |
EAR99 |
Drain Source Voltage (Vdss) |
120V |
60V |
Continuous Drain Current (Id) |
120A |
13.4A;67A |
Power Dissipation (Pd) |
300W |
3.6W;89W |
Drain Source On Resistance (RDS(on)@Vgs,Id) |
3.8mΩ@100A,10V |
11mΩ@10V,13.4A |
Gate Threshold Voltage (Vgs(th)@Id) |
4V@270uA |
4.9V@100uA |
Type |
1PCSNChannel |
1PCSNChannel |
Input Capacitance (Ciss@Vds) |
13.8nF@60V |
1.35nF@25V |
Total Gate Charge (Qg@Vgs) |
211nC@10V |
36nC@10V |
Operating Temperature |
-55℃~+175℃@(Tj) |
-40℃~+150℃@(Tj) |